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參數(shù)資料
| 型號： | BF1206F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 2/21頁 |
| 文件大?。?/td> | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
2 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
y
fs
forward transfer admittance
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
3. Ordering information
Table 3.
Type number
Quick reference data
Conditions
Min
-
-
Typ
-
-
Max Unit
6
30
V
mA
I
D
= 4 mA
amplifier A
amplifier B
I
D
= 4 mA; f = 100 MHz
amplifier A
amplifier B
I
D
= 4 mA
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
17
17
22
22
32
32
mS
mS
C
iss(G1)
input capacitance at gate1
-
-
2.4
1.7
2.9
2.2
pF
pF
NF
noise figure
-
-
1.0
1.0
1.6
1.6
dB
dB
Xmod
cross modulation
92
93
97
98
-
-
dB
V
dB
V
Discrete pinning
Description
gate1 (AMP A)
source
gate1 (AMP B)
drain (AMP B)
drain (AMP A)
gate2
Simplified outline
Symbol
1
2
3
4
5
6
sym111
AMP A
AMP B
G1A
S
G1B
G2
DA
DB
Ordering information
Package
Name
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
BF1206F
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|---|---|
| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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