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| 型號(hào)： | BF1206F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 13/21頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | BF1206F |
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BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
13 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
(1) R
G1
= 120 k
.
(2) R
G1
= 150 k
.
(3) R
G1
= 180 k
.
(4) R
G1
= 220 k
.
(5) R
G1
= 270 k
.
(6) R
G1
= 330 k
.
(7) R
G1
= 390 k
.
(8) R
G1
= 470 k
.
V
G2-S
= 2.5 V; R
G1(B)
connected to V
GG
; see
Figure 32
.
Fig 23. Amplifier B: drain current as a function of V
DS
and V
GG
; typical values
(1) V
GG
= 3.0 V.
(2) V
GG
= 2.5 V.
(3) V
GG
= 2.0 V.
(4) V
GG
= 1.5 V.
(5) V
GG
= 1.0 V.
R
G1(B)
= 220 k
; T
j
= 25
C; see
Figure 32
.
Fig 24. Amplifier B: drain current as a function of
gate2 voltage; typical values
V
GG
= V
DS
(V)
0
4
3
1
2
001aad917
4
6
2
8
10
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(8)
(7)
V
G2
S
(V)
0
4
3
1
2
001aad918
2
4
6
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
V
DS(A)
= 2.8 V; V
G2(nom)
= 2.5 V; I
D(nom)
= 4 mA;
T
amb
= 25
C.
Fig 25. Amplifier B: typical gain reduction as a
function of the AGC voltage; typical values
V
DS(B)
= 2.8 V; V
G2
= 2.5 V; I
D(nom)
= 4 mA; f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C.
Fig 26. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
001aad919
V
AGC
(V)
0
3
2
1
30
20
40
10
0
gain
reduction
(dB)
50
001aad920
gain reduction (dB)
0
60
40
20
90
100
110
V
unw
(dB
μ
V)
80
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BF1206F,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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