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參數(shù)資料
| 型號(hào)： | BF1109R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1109R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件頁(yè)數(shù)： | 15/15頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | BF1109R |
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NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information please visit:
http://www.nxp.com
For sales offices addresses send e-mail to:
salesaddresses@nxp.com
NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands
R77/02/pp
15
Date of release:
1997 Dec 08
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PDF描述 |
|---|---|
| BF1109WR | N-channel dual-gate MOSFET |
| BF1109R | N-channel dual-gate MOSFET |
| BF1109WR | N-channel dual-gate MOSFET |
| BF1118 | Silicon RF switches |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1109R,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 11V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1109WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1109WR,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-110BPA/KOEM | 功能描述:FLASHLIGHT HEAVY DUTY W/2D CELLS RoHS:是 類別:工具 >> 閃光燈 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 類型:筆形手電筒 燈類型:LED 燈輸出:- 特點(diǎn):可變強(qiáng)度 電池大小:AA（需要 1 個(gè)） 長(zhǎng)度:- 主體材料:- |
| BF1118,215 | 功能描述:RF 開關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開關(guān)數(shù)量:Single 開關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel |
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