參數(shù)資料
型號(hào): BF1101
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF1101<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁(yè)數(shù): 5/15頁(yè)
文件大小: 373K
代理商: BF1101
1999 May 14
5
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
Fig.5 Transfer characteristics; typical values.
V
DS
= 5 V.
T
j
= 25
C.
handbook, halfpage
(mA)
0
8
12
16
4
0
0.4
MGS299
3 V
0.8
1.2
1.6
2
VG1-S (V)
3.5 V
2.5 V
2 V
1 V
1.5 V
VG2-S = 4 V
Fig.6 Output characteristics; typical values.
V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
(mA)
0
8
12
16
4
0
2
MGS300
4
6
8
VDS (V)
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1 V
VG1-S = 1.6 V
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
V
DS
= 5 V.
T
j
= 25
C.
handbook, halfpage
IG1
(
μ
A)
0
40
60
80
20
0
0.5
MGS301
1
1.5
2
2.5
VG1-S (V)
3.5 V
3 V
2.5 V
2 V
VG2-S = 4 V
Fig.8
Forward transfer admittance as a
function of drain current; typical values.
V
DS
= 5 V.
T
j
= 25
C.
handbook, halfpage
yfs
(mS)
0
20
30
10
0
8
16
4
12
20
MGS302
ID (mA)
3 V
2.5 V
2 V
VG2-S = 4 V
3.5 V
相關(guān)PDF資料
PDF描述
BF1101 N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
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BF1101,215 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101R,215 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 7V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel