參數(shù)資料
型號： BF1101
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1101<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數(shù)： 2/15頁
文件大?。?/td> 373K
代理商： BF1101
1999 May 14
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R;
BF1101WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1101 marking code:
NDp.
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.2
Simplified outline
(SOT143R).
BF1101R marking code:
NCp.
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.3
Simplified outline
(SOT343R).
BF1101WR marking code:
NC.
, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
25
100
30
2.2
25
1.7
7
30
200
2.7
35
2.5
V
mA
mW
mS
pF
fF
dB
dB
V
f = 1 MHz
f = 800 MHz
input level for k = 1% at
40 dB AGC
T
j
operating junction temperature
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
相關(guān)PDF資料
PDF描述
BF1101 N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
BF1101R N-channel dual-gate MOSFET
BF1101WR N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1101,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101R,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1101WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1101WR,115 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 7V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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