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參數(shù)資料
| 型號(hào)： | ATF-541M4-TR2 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁(yè)數(shù)： | 7/17頁(yè) |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR2 |
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15
ATF-541M4 Die Model
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0. pF
Port
S1
Num=
SOURCE
DRAIN
Port
S
Num=4
Port
D
Num=
L
L6
L=0.14 nH
R=0.001
C
C=0.046 pF
L
L=0.4 nH
R=0.001
MSub
TLINP
TL
Z=Z Ohm
L=.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL
Z=Z Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z=5
Z1=0
Var
Egn
TLINP
TL1
Z=Z/ Ohm
L= mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL
Z=Z/ Ohm
L=0 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL
Z=Z/ Ohm
L=5. mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z Ohm
L=.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.4 nH
R=0.001
L
L4
L=0.1 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub
H=5.0 mil
Er=.6
Mur=1
Cond=1.0E+50
Hu=.e+04 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-541M4 Minipak Model
This model can be used as a design tool. It has been tested on ADS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet. For future improvements, Avago
reserves the right to change these models without prior notice.
NFET=yes
PFET=no
Vto=0.
Beta=0.
Lambda=e-
Alpha=1
Tau=
Tnom=16.5
Idstc=
Ucrit=-0.
Vgexp=1.1
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Gscap=
Cgs=1. pF
Cgd=0.55 pF
Gdcap=
Fc=0.65
Rgd=0.5 Ohm
Rd=1.015 Ohm
Rg=1. Ohm
Rs=0.5 Ohm
Ld=
Lg=0.1 nH
Ls=
Cds=0. pF
Rc=15 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R=
Vbi=0.5
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.0
P=0.
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice_Model
MESFETM1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF55143 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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