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參數(shù)資料
| 型號： | ATF-541M4-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 13/17頁 |
| 文件大小： | 731K |
| 代理商： | ATF-541M4-TR2 |
5
ATF-541M4 Typical Performance Curves, continued
ATF-541M4 Output Reflection Coefficient Parameters Tuned for Maximum Output IP[1]; VDS = V, IDS = 60 mA
Freq
(GHz)
Gamma[]
Out_Mag.
(Mag)
Gamma[]
Out_Mag.
(Degrees)
OIP
(dBm)
P1dB
(dBm)
0.9
0.006
23
35.04
19.47
2.0
0.314
167
35.82
21.36
3.9
0.321
134
36.60
20.37
5.8
0.027
89
37.62
19.38
Notes:
1. Input tuned for minimum NF and the output tuned for maximum OIP3 using an InterContinental Microwave (ICM) test fixture, double stub
tuners and bias tees.
2. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
Figure 11. Gain vs. Freq. and Temperature
Tuned for Max OIP and Min NF at
Vds = V, Ids = 60 mA[1].
Figure 1. OIP vs. Freq. and Temperature
Tuned for Max OIP and Min NF at
Vds = V, Ids = 60 mA[1].
Figure 1. NF vs. Freq. and Temperature
Tuned for Max OIP and Min NF at
Vds = V, Ids = 60 mA[1].
FREQUENCY (GHz)
OIP
(dBm)
0
1
6
5
4
45
40
5
0
5
0
15
10
5 C
-40 C
5 C
FREQUENCY (GHz)
NF
(dB)
0
1
6
5
4
.0
1.5
1.0
0.5
0
5 C
-40 C
5 C
FREQUENCY (GHz)
P1dB
(dBm)
0
1
6
5
4
1
0
1
5 C
-40 C
5 C
Figure 14. P1dB vs. Freq. and Temperature
Tuned for Max OIP and Min NF at
Vds = V, Ids = 60 mA[1].
FREQUENCY (GHz)
GAIN
(dB)
0
1
6
5
4
0
5
0
15
10
5
0
5 C
-40 C
5 C
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
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|---|---|
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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