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參數(shù)資料
| 型號(hào)： | ATF-541M4-TR2 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁(yè)數(shù)： | 6/17頁(yè) |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR2 |
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14
0.5
0.00
0.4
0.016
0.4
0.016
1.1
0.04
0.
0.01
0.5
0.00
0.
0.01
Figure 5. PCB Pad Print for Minipak 141.
Package (mm [inches ]).
This pad print provides allowance for package place
ment by automated assembly equipment without add
ing excessive parasitics that could impair the high fre
quency performance of the ATF541M4. The layout is
shown with a footprint of the ATF541M4 superimposed
on the PCB pads for reference.
For Further Information
The information presented here is an introduction to the
use of the ATF541M4 enhancement mode PHEMT. More
detailed application circuit information is available from
Avago Technologies. Consult the web page or your local
Avago Technologies sales representative.
PCB Layout
A suggested PCB pad print for the miniature, Minipak
1412 package used by the ATF541M4 is shown in Figure
25.
and rearranging equation (5) provides the follow for
mula
R1 =
V
DD
(5A)
I
BB
(1+ V
DD – VB
)
V
B
Example Circuit
V
DD = 5 V
V
ds = 3V
I
ds = 60 mA
R4 = 10
V
BE = 0.7 V
Equation (1) calculates the required voltage at the emit
ter of the PNP transistor based on desired V
ds and Ids
through resistor R4 to be 3.6V. Equation (2) calculates the
value of resistor R3 which determines the drain current
I
ds. In the example R3=23.3. Equation (3) calculates the
voltage required at the junction of resistors R1 and R2.
This voltage plus the stepup of the base emitter junc
tion determines the regulated V
ds. Equations (4) and (5)
are solved simultaneously to determine the value of
resistors R1 and R2. In the example R1=1450
and R2
=1050
. Resistor R7 is chosen to be 1 k. This resistor
keeps a small amount of current flowing through Q2 to
help maintain bias stability. R6 is chosen to be 10 K
.
This value of resistance is high enough to limit Q1 gate
current in the presence of high RF drive levels as experi
enced when Q1 is driven to the P1dB gain compression
point. C7 provides a low frequency bypass to keep noise
from Q2 effecting the operation of Q1. C7 is typically
0.1 F.
Maximum Suggested Gate Current
The maximum suggested gate current for the ATF541M4
is 2 mA. Incorporating resistor R5 in the passive bias net
work or resistor R6 in the active bias network safely limits
gate current to 500
A at P1dB drive levels. In order to
minimize component count in the passive biased ampli
fier circuit, the 3 resistor bias circuit consisting of R1, R2,
and R5 can be simplified if desired. R5 can be removed if
R1 is replaced with a 4.7K
resistor and if R2 is replaced
with a 27K
resistor. This combination should limit gate
current to a safe level.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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