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參數(shù)資料
| 型號： | ATF-541M4-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 10/17頁 |
| 文件大小： | 731K |
| 代理商： | ATF-541M4-TR2 |
ATF-541M4 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Maximum
V
DS
DrainSource Voltage[2]
V
5
V
GS
GateSource Voltage[2]
V
5 to +1
V
GD
Gate Drain Voltage[2]
V
5
I
DS
Drain Current[2]
mA
120
I
GS
Gate Current[5]
mA
2
P
diss
Total Power Dissipation[3]
mW
360
P
in max.
RF Input Power[5]
(Vd=3V, Id=60mA)
(Vd=0V, Id=0mA)
dBm
20
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
65 to 150
θ
jc
Thermal Resistance[4]
°C/W
212
VDS (V)
Figure 1. Typical I-V Curves.
(VGS=0.1V per step)
I DS
(mA)
0.4V
0.5V
0.6V
0.V
0
1
4
6
5
10
100
0
60
40
0
Product Consistency Distribution Charts [6,7]
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a tradeoff between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been deembedded from actual measurements.
OIP (dBm)
Figure . OIP @ GHz, V, 60 mA.
LSL = .0, Nominal = 5.
5
41
0
40
160
0
Cpk = 0.5
Stdev = 1.14
- Std
GAIN (dB)
Figure . Gain @ GHz, V, 60 mA.
LSL = 15.5, Nominal = 1.5, USL = 1.5
15
1
16
1
0
Cpk = 1.16
Stdev = 0.0
- Std
+ Std
0
40
160
0
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.7 mW/°C for T
L > 74°C.
4. Thermal resistance measured using 150°C Liquid Crystal
Measurement method.
5. The device can handle +13 dBm RF Input Power provided I
GS is
limited to 2 mA. I
GS at P1dB drive level is bias circuit dependent. See
applications section for additional information.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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