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參數(shù)資料
| 型號： | ATF-541M4-TR2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 731K |
| 代理商： | ATF-541M4-TR2 |
11
TIME (seconds)
TEMPERA
TURE
(C
)
0
50
100
150
200
250
60
120
180
240
300
T
MAX
Preheat
Zone
Cool Down
Zone
Reow
Zone
TIME (seconds)
Peak Temperature
Min. 240 C
Max. 255 C
TEMPERA
TURE
(C
)
0
50
150
100
221
200
250
300
350
60 90
30
120 150
210
180
270 300 330
240
360
Preheat 130–170 C
Min. 60s
Max. 150s
Reow Time
Min. 60s
Max. 90s
The preheat zones increase the temperature of the board
and components to prevent thermal shock and begin
evaporating solvents from the solder paste. The reflow
zone briefly elevates the temperature sufficiently to pro
duce a reflow of the solder.
The rates of change of temperature for the rampup and
cooldown zones are chosen to be low enough to not
cause deformation of board or damage to components
due to thermal shock. The maximum temperature in the
reflow zone (Tmax) should not exceed 235
°C for leaded
solder.
These parameters are typical for a surface mount assem
bly process for the ATF541M4. As a general guideline, the
circuit board and components should only be exposed
to the minimum temperatures and times the necessary
to achieve a uniform reflow of solder.
The recommended leadfree reflow profile is shown in
Figure 21.
Electrostatic Sensitivity
FETs and RFICs are electrostatic discharge (ESD) sensitive
devices. Avago devices are manufactured using a very
robust and reliable PHEMT process, however, permanent
damage may occur to these devices if they are subject
ed to highenergy electrostatic discharges. Electrostatic
charges as high as several thousand volts (which readily
accumulate on the human body and on test equipment)
can discharge without detection and may result in failure
or degradation in performance and reliability.
Electronic devices may be subjected to ESD damage in
any of the following areas:
Storage & handling
Inspection
Assembly & testing
Incircuit use
The ATF541M4 is an ESD Class 1 device. Therefore, prop
er ESD precautions are recommended when handling,
inspecting, testing, and assembling these devices to
avoid damage.
Any useraccessible points in wireless equipment (e.g.
antenna or battery terminals) provide an opportunity for
ESD damage.
For circuit applications in which the ATF541M4 is used
as an input or output stage with close coupling to an
external antenna, the device should be protected from
high voltage spikes due to human contact with the an
tenna. A good practice, illustrated in Figure 22, is to place
a shunt inductor or RF choke at the antenna connection
to protect the receiver and transmitter circuits. It is often
advantageous to integrate the RF choke into the design
of the diplexer or T/R switch control circuitry.
Figure 1. Lead-free Solder Reflow Profile.
Figure 0. Leaded Solder Reflow Profile.
Figure . In-circuit ESD Protection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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