參數(shù)資料
型號： ATF-521P8-TR2
元件分類： 小信號晶體管
英文描述： L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
文件頁數(shù)： 5/23頁
文件大?。?/td> 319K
代理商： ATF-521P8-TR2
13
ATF-521P8 Typical Scattering Parameters, V
DS = 3V, IDS = 200 mA
Freq.
S
11
S
21
S
12
S
22 MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.867
94.6
33.7
48.20
132.4
36.8
0.014
45.1
0.482
132.4
35.4
0.2
0.894
132.9
29.4
29.66
113.2
34.9
0.018
28.5
0.601
154.2
32.2
0.3
0.899
148.2
26.5
21.06
104.4
34.1
0.020
23.2
0.636
163.8
30.2
0.4
0.896
157.2
24.1
16.00
99.1
34.0
0.020
23.7
0.647
169.2
29.0
0.5
0.892
162.8
22.4
13.20
95.6
33.6
0.021
24.5
0.650
171.9
28.0
0.6
0.910
167.4
20.8
11.00
92.3
33.2
0.022
22.9
0.655
174.4
27.0
0.7
0.906
170.8
19.6
9.51
90.2
33.2
0.022
23.9
0.657
176.7
26.4
0.8
0.902
173.6
18.4
8.35
87.8
33.0
0.022
24.6
0.658
178.2
25.8
0.9
0.907
175.2
17.5
7.51
86.3
32.9
0.023
27.0
0.660
179.5
25.1
1
0.902
177.7
16.6
6.76
84.2
32.5
0.024
26.9
0.659
178.6
24.5
1.5
0.900
174.2
13.1
4.50
76.4
31.5
0.027
32.7
0.656
173.4
22.2
2
0.896
168.1
10.8
3.49
69.1
29.9
0.032
32.9
0.647
167.9
20.4
2.5
0.896
162.3
9.0
2.82
63.0
29.0
0.036
34.3
0.642
163.7
18.6
3
0.887
156.7
7.4
2.35
56.9
27.7
0.041
35.0
0.643
159.2
15.6
4
0.890
145.7
4.9
1.76
43.8
26.1
0.050
32.2
0.645
150.4
12.9
5
0.898
136.3
3.0
1.41
32.1
24.5
0.059
28.3
0.659
142.1
11.3
6
0.896
127.4
1.3
1.16
21.6
23.4
0.068
23.5
0.671
134.3
9.5
7
0.904
119.4
0.2
0.98
10.3
22.1
0.078
17.7
0.677
126.6
8.5
8
0.877
104.9
1.6
0.83
2.3
20.7
0.092
9.0
0.651
117.0
5.9
9
0.883
94.8
2.4
0.76
13.0
19.8
0.102
1.3
0.661
107.2
5.3
10
0.877
83.1
3.5
0.67
26.0
18.9
0.113
7.3
0.657
96.8
4.0
11
0.875
71.7
4.4
0.60
36.3
18.3
0.121
16.6
0.670
86.7
3.1
12
0.863
60.6
5.4
0.54
47.4
17.8
0.128
25.1
0.680
76.2
1.9
13
0.910
51.6
6.5
0.47
57.9
17.6
0.132
33.6
0.694
65.9
2.3
14
0.868
40.9
7.5
0.42
62.8
17.2
0.138
40.4
0.721
59.3
0.2
15
0.863
33.4
8.1
0.39
74.7
16.8
0.144
47.6
0.748
51.3
0.2
16
0.835
25.2
9.6
0.33
78.2
16.3
0.154
56.8
0.758
44.9
2.1
17
0.720
11.2
9.5
0.33
90.8
15.8
0.161
67.6
0.818
39.4
2.6
18
0.780
7.7
11.6 0.26
92.8
17.0
0.142
85.1
0.655
37.1
5.7
Freq
F
min
Γ
opt
Γ
opt
R
n
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.66
0.22
147.00
2.9
20.0
1.0
0.72
0.30
160.00
2.6
18.3
2.0
0.87
0.42
179.94
1.9
16.0
3.0
1.00
0.59
163.63
1.6
13.7
4.0
1.32
0.63
153.81
3.7
11.3
5.0
1.49
0.72
135.10
10.0
9.9
6.0
1.59
0.74
128.97
15.0
8.5
7.0
1.79
0.78
117.68
25.1
7.6
8.0
1.96
0.70
110.04
29.2
5.6
Typical Noise Parameters, V
DS = 3V, IDS = 200 mA
Figure 44. MSG/MAG and |S21|2 vs.
Frequency at 3V, 200 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
相關(guān)PDF資料
PDF描述
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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