- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42903 > ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-53189-TR1 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 144K |
| 代理商： | ATF-53189-TR1 |
ATF-53189
Enhancement Mode[1] Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Features
x Single voltage operation
x High Linearity and Gain
x Low Noise Figure
x Excellent uniformity in product specications
x SOT 89 standard package
x Point MTTF > 300 years[2]
x MSL-1 and lead-free
x Tape-and-Reel packaging option available
Specications
2 GHz, 4.0V, 135 mA (Typ.)
x 40.0 dBm Output IP3
x 23.0 dBm Output Power at 1dB gain compression
x 0.85 dB Noise Figure
x 15.5 dB Gain
x 46% PAE at P1dB
x LFOM[3] 12.7 dB
Applications
x Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-
er for Cellular/PCS and WCDMA wireless infrastruc-
x Driver Amplier for WLAN, WLL/RLL and MMDS ap-
plications
x General purpose discrete E-pHEMT for other high
linearity applications
Notes:
Package marking provides orientation and identication:
“3G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a single positive V
gs
,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Description
Avago Technologies’s ATF-53189 is a single-voltage high
linearity, low noise E-pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
high-linearity, low noise, medium-power amplier. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS application,
and general purpose discrete E-pHEMT ampliers which
require medium power and high linearity. All devices are
100% RF and DC tested.
Pin Connections and Package Marking
3GX
Bottom View
DS
S
G
Top View
GS
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-53189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-53189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-531P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-531P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。