參數(shù)資料
型號： ATF-53189-TR1
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE PACKAGE-3
文件頁數(shù)： 9/15頁
文件大?。?/td> 144K
代理商： ATF-53189-TR1
3
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and
ACLR measurements. This circuit achieves a trade-o between optimal OIP3, P1dB and VSWR. Circuit
losses have been de-embedded from actual measurements.
Input
Output
Output Matching Circuit
Γ_mag=0.40
Γ_ang=120.0°
Input Matching Circuit
Γ_mag=0.74
Γ_ang=-112.4°
DUT
Notes:
1. Distribution data sample size is 500 samples taken from 3 dierent wafers. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower
limits.
2. Measurements are made on production test board, which represents a trade-o between
optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measure-
ments.
Product Consistency Distribution Charts [1,2]
Figure 2. OIP3 @ 2 GHz, 4V, 135 mA.
LSL = 36 dBm, Nominal = 40 dBm.
OIP3 (dBm)
FREQUENCY
36 37 38 39 40 41 42
43 44 45
150
120
90
60
30
0
Stdev=0.86
+3 Std
–3 Std
Figure 3. NF @ 2 GHz, 4V, 135 mA.
USL = 1.30 dBm, Nominal = 0.84 dBm.
NF (dB)
FREQUENCY
.5
.6
.7
.8
.9
1
1.1
150
120
90
60
30
0
Stdev=0.08
+3 Std
–3 Std
Figure 4. Gain @ 2 GHz, 4V, 135 mA.
LSL = 14 dBm, Nominal = 15.5 dBm,
USL = 17 dBm.
Gain (dB)
FREQUENCY
14.5
15
15.5
16
16.5
150
120
90
60
30
0
Stdev=0.22
+3 Std
–3 Std
Figure 5. P1dB @ 2 GHz, 4V, 135 mA.
Nominal = 23 dBm.
P1dB (dBm)
FREQUENCY
19
20
21
22
23
24
25
26
150
120
90
60
30
0
Stdev=1.14
+3 Std
–3 Std
相關(guān)PDF資料
PDF描述
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-53189-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-531P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-531P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-531P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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