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ATF-521P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’ ATF521P8 is a singlevoltage high
linearity, low noise EpHEMT housed in an 8lead JEDEC
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a mediumpower, highlinearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over
300 years at a mounting temperature of +85°C. All
devices are 100% RF & DC tested.
Pin Connections and Package Marking
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product specifications
Small package size: 2.0 x 2.0 x 0.75 mm3
Point MTTF > 300 years[2]
MSL1 and leadfree
Tapeandreel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
42 dBm output IP3
26.5 dBm output power at 1 dB gain compression
1.5 dB noise figure
17 dB Gain
12.5 dB LFOM[4]
Applications
FrontendLNAQ2andQ3,driverorpredriveramplifier
for Cellular/PCS and WCDMA wireless infrastructure
DriveramplifierforWLAN,WLL/RLLandMMDSapplica
tions
GeneralpurposediscreteEpHEMTforotherhighlinear
ity applications
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
Note:
1. Enhancement mode technology employs a single positive V
gs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRPN
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
2Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge Damage and Control.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-53189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-53189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
| ATF-521P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
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