參數(shù)資料
型號(hào): ATF-521P8-BLK
元件分類: 小信號(hào)晶體管
英文描述: L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝: 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
文件頁(yè)數(shù): 18/23頁(yè)
文件大?。?/td> 319K
代理商: ATF-521P8-BLK
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Optimum OIP3
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.9
0.413
10.5
0.314
179.0
42.7
16.0
27.0
54.0
2
0.368
162.0
0.538
176.0
42.5
15.8
27.5
55.3
2.4
0.318
169.0
0.566
169.0
42.0
14.1
27.4
53.5
3.9
0.463
134.0
0.495
159.0
40.3
9.6
27.3
43.9
Optimum P1dB
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.9
0.587
12.7
0.613
172.1
39.1
14.5
29.3
49.6
2
0.614
126.1
0.652
172.5
39.5
12.9
29.3
49.5
2.4
0.649
145.0
0.682
171.5
40.0
12.0
29.4
46.8
3.9
0.552
162.8
0.670
151.2
38.1
9.6
27.9
39.1
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.5 pF
3.9 nH
1.5 pF
RF Output
50 Ohm
.02
λ
110 Ohm
.03
λ
110 Ohm
.03
λ
50 Ohm
.02
λ
DUT
1 pF
12 nH
15 Ohm
2.2
F
Gate
Supply
47 nH
2.2
F
Drain
Supply
相關(guān)PDF資料
PDF描述
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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