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參數(shù)資料
| 型號(hào)： | ATF-521P8-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件頁數(shù)： | 19/23頁 |
| 文件大?。?/td> | 319K |
| 代理商： | ATF-521P8-BLK |
5
ATF-521P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
4.5V
4V
3V
Id (mA)
OIP3
(dBm)
50
45
40
35
30
25
20
15
10
100
400
200
150
300
350
250
Figure 9. OIP3 vs. Ids and Vds at 900 MHz.
Id (mA)
OIP3
(dBm)
45
40
35
30
25
20
15
10
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
Id (mA)
OIP3
(dBm)
50
45
40
35
30
25
20
15
10
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 11. P1dB vs. Idq and Vds at 2 GHz.
Idq (mA)
P1dB
(dBm)
35
30
25
20
15
10
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 12. P1dB vs. Idq and Vds at 900 MHz.
4.5V
4V
3V
Idq (mA)
P1dB
(dBm)
35
30
25
20
15
10
100
400
200
150
300
350
250
Figure 13. P1dB vs. Idq and Vds at 3.9 GHz.
4.5V
4V
3V
Idq (mA)
P1dB
(dBm)
35
30
25
20
15
10
100
400
200
150
300
350
250
Figure 14. Small Signal Gain vs Ids and Vds
at 2 GHz.
Id (mA)
GAIN
(dBm)
17
16
15
14
13
12
11
10
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 15. Small Signal Gain vs Ids and Vds
at 900 MHz.
Id (mA)
GAIN
(dBm)
17
16
15
14
13
12
11
10
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 16. Small Signal Gain vs Ids and Vds
at 3.9 GHz.
Id (mA)
GAIN
(dBm)
12
11
10
9
8
7
6
5
100
400
200
150
300
350
250
4.5V
4V
3V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-53189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-53189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
| ATF-521P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
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