參數(shù)資料
型號： ATF-521P8-TR1
元件分類： 小信號晶體管
英文描述： L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
文件頁數(shù)： 4/23頁
文件大小： 319K
代理商： ATF-521P8-TR1
12
Freq
F
min
Γ
opt
Γ
opt
R
n
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.67
0.21
155.00
2.8
20.1
1.0
0.74
0.30
164.00
2.6
18.4
2.0
0.96
0.46
176.61
2.1
16.4
3.0
1.24
0.57
162.19
2.8
13.9
4.0
1.44
0.62
152.18
4.5
11.4
5.0
1.62
0.69
135.43
10.0
6.0
1.83
0.74
127.94
17.0
8.7
7.0
1.99
0.82
117.20
27.7
7.7
8.0
2.21
0.71
108.96
35.3
5.9
Typical Noise Parameters, V
DS = 4V, IDS = 200 mA
Figure 43. MSG/MAG and |S21|2 vs.
Frequency at 4V, 200 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
ATF-521P8 Typical Scattering Parameters, V
DS = 4V, IDS = 200 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.843
90.5
34.3
51.89
134.8
37.7
0.013
46.5
0.408
118.1
36.0
0.2
0.879
129.3
30.3
32.88
115.0
35.4
0.017
32.1
0.507
146.1
32.9
0.3
0.888
146.1
27.4
23.48
105.8
35.1
0.018
26.0
0.539
158.3
31.2
0.4
0.892
155.6
25.1
17.91
100.1
34.4
0.019
25.1
0.549
164.8
29.7
0.5
0.886
161.5
23.4
14.80
96.3
34.2
0.020
24.6
0.551
168.2
28.7
0.6
0.896
165.7
21.8
12.37
92.7
34.2
0.020
24.1
0.556
170.9
27.9
0.7
0.897
169.5
20.6
10.74
90.5
33.6
0.021
24.7
0.557
173.5
27.1
0.8
0.898
172.2
19.5
9.39
88.1
33.5
0.021
24.4
0.559
175.2
26.5
0.9
0.896
174.9
18.6
8.47
85.9
33.3
0.022
26.5
0.559
176.9
25.9
1
0.896
176.7
17.6
7.61
84.0
32.9
0.023
26.3
0.560
178.7
25.2
1.5
0.898
175.2
14.1
5.06
75.7
32.1
0.025
29.9
0.558
176.0
23.1
2
0.887
168.0
11.8
3.91
68.1
30.7
0.029
35.2
0.547
170.9
21.3
2.5
0.893
162.8
10.0
3.15
61.7
29.5
0.034
35.8
0.545
166.9
18.9
3
0.886
156.9
8.4
2.63
55.1
28.4
0.038
35.8
0.547
162.6
16.3
4
0.887
146.6
5.9
1.97
41.5
26.7
0.046
33.2
0.554
154.3
13.6
5
0.894
136.8
3.9
1.57
29.4
25.1
0.056
29.6
0.572
146.6
11.9
6
0.898
127.4
2.1
1.28
17.7
23.9
0.064
25.5
0.590
139.0
10.3
7
0.896
119.7
0.7
1.09
6.3
22.6
0.074
20.4
0.603
131.6
8.9
8
0.879
105.4
0.9
0.90
7.1
21.1
0.088
12.4
0.594
122.7
6.6
9
0.888
95.0
1.7
0.82
19.3
20.1
0.099
4.7
0.609
113.2
6.1
10
0.872
84.1
2.9
0.72
30.9
19.2
0.110
4.3
0.610
102.9
4.4
11
0.880
72.4
3.8
0.65
42.8
18.6
0.118
12.9
0.629
92.6
3.8
12
0.875
60.4
4.8
0.58
53.3
18.0
0.126
22.8
0.647
81.9
2.8
13
0.908
52.4
6.2
0.49
63.4
17.7
0.130
31.4
0.666
71.0
2.6
14
0.898
41.3
7.1
0.44
73.5
17.2
0.138
38.0
0.699
64.0
1.5
15
0.888
34.1
8.2
0.39
80.2
16.8
0.144
45.6
0.734
55.9
0.5
16
0.815
24.1
8.9
0.36
85.3
16.2
0.156
54.7
0.750
49.3
1.7
17
0.725
11.3
9.9
0.32
90.9
15.5
0.167
66.0
0.809
43.5
3.1
18
0.792
9.8
10.2 0.31
95.1
16.6
0.147
84.8
0.652
39.7
4.2
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
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