- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42903 > ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-521P8-TR1 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件頁(yè)數(shù)： | 14/23頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | ATF-521P8-TR1 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
21
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
Ordering Information
Part Number
No. of Devices
Container
ATF521P8TR1
3000
7” Reel
ATF521P8TR2
10000
13”Reel
ATF521P8BLK
100
antistatic bag
Device Models
Refer to Avago Technologies' Web Site:
www.avagotech.com
Thus, for reliable operation of ATF521P8 and extended
MTBF, it is recommended to use some form of thermal
heatsinking. This may include any or all of the following
suggestions:
Maximize vias underneath and around package;
Maximize exposed surface metal;
Use 1 oz or greater copper clad;
Minimize board thickness;
Metal heat sinks or extrusions;
Fans or forced air;
Mount PCB to Chassis.
Summary
A high linearity Tx driver amplifier for WCDMA has been
presented and designed using Agilent’s ATF521P8. This
includes RF, DC and good thermal dissipation practices
for reliable lifetime operation. A summary of the typical
performance for ATF521P8 demoboard at 2140 MHz is
as follows:
Demo Board Results at 2140 MHz
Gain
16.5 dB
OIP3
41.2 dBm
ACLR
58 dBc
P1dB
24.8 dBm
NF
1.55 dB
References
[1] Ward, A. (2001) Avago Technologies ATF-54143 Low Noise
Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic
Package, 2001 [Internet], Available from:
<http://www.avagotech.com>
[2] Biasing Circuits and Considerations for GaAs MESFET
Power Amplifiers, 2001 [Internet], Available from:
<http://www.rfsolutions.com/pdf/AN0002_ajp.pdf>
[Accessed 22 August, 2002]
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
L
b
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.225
1.9
0.65
1.9
1.45
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
1
pin1
2
3
4
2PX
Top View
End View
Bottom View
A2
A A1
0.2
0.25
0.3
P
0.35
0.4
0.45
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-521P8-BLK | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-53189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-53189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-521P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
| ATF-53189 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-53189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-53189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。