參數(shù)資料
型號(hào)： ATF-521P8-BLKG
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù)： 4/24頁
文件大?。?/td> 248K
代理商： ATF-521P8-BLKG
12
Freq
Fmin
Γopt
Rn
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.67
0.21
155.00
2.8
20.1
1.0
0.74
0.30
164.00
2.6
18.4
2.0
0.96
0.46
-176.61
2.1
16.4
3.0
1.24
0.57
-162.19
2.8
13.9
4.0
1.44
0.62
-152.18
4.5
11.4
5.0
1.62
0.69
-135.43
10.0
6.0
1.83
0.74
-127.94
17.0
8.7
7.0
1.99
0.82
-117.20
27.7
7.7
8.0
2.21
0.71
-108.96
35.3
5.9
Typical Noise Parameters, VDS = 4V, IDS = 200 mA
Figure 43. MSG/MAG and |S21|
2 vs.
Frequency at 4V, 200 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
ATF-521P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.843
-90.5
34.3
51.89
134.8
-37.7
0.013
46.5
0.408
-118.1
36.0
0.2
0.879
-129.3
30.3
32.88
115.0
-35.4
0.017
32.1
0.507
-146.1
32.9
0.3
0.888
-146.1
27.4
23.48
105.8
-35.1
0.018
26.0
0.539
-158.3
31.2
0.4
0.892
-155.6
25.1
17.91
100.1
-34.4
0.019
25.1
0.549
-164.8
29.7
0.5
0.886
-161.5
23.4
14.80
96.3
-34.2
0.020
24.6
0.551
-168.2
28.7
0.6
0.896
-165.7
21.8
12.37
92.7
-34.2
0.020
24.1
0.556
-170.9
27.9
0.7
0.897
-169.5
20.6
10.74
90.5
-33.6
0.021
24.7
0.557
-173.5
27.1
0.8
0.898
-172.2
19.5
9.39
88.1
-33.5
0.021
24.4
0.559
-175.2
26.5
0.9
0.896
-174.9
18.6
8.47
85.9
-33.3
0.022
26.5
0.559
-176.9
25.9
1
0.896
-176.7
17.6
7.61
84.0
-32.9
0.023
26.3
0.560
-178.7
25.2
1.5
0.898
175.2
14.1
5.06
75.7
-32.1
0.025
29.9
0.558
176.0
23.1
2
0.887
168.0
11.8
3.91
68.1
-30.7
0.029
35.2
0.547
170.9
21.3
2.5
0.893
162.8
10.0
3.15
61.7
-29.5
0.034
35.8
0.545
166.9
18.9
3
0.886
156.9
8.4
2.63
55.1
-28.4
0.038
35.8
0.547
162.6
16.3
4
0.887
146.6
5.9
1.97
41.5
-26.7
0.046
33.2
0.554
154.3
13.6
5
0.894
136.8
3.9
1.57
29.4
-25.1
0.056
29.6
0.572
146.6
11.9
6
0.898
127.4
2.1
1.28
17.7
-23.9
0.064
25.5
0.590
139.0
10.3
7
0.896
119.7
0.7
1.09
6.3
-22.6
0.074
20.4
0.603
131.6
8.9
8
0.879
105.4
-0.9
0.90
-7.1
-21.1
0.088
12.4
0.594
122.7
6.6
9
0.888
95.0
-1.7
0.82
-19.3
-20.1
0.099
4.7
0.609
113.2
6.1
10
0.872
84.1
-2.9
0.72
-30.9
-19.2
0.110
-4.3
0.610
102.9
4.4
11
0.880
72.4
-3.8
0.65
-42.8
-18.6
0.118
-12.9
0.629
92.6
3.8
12
0.875
60.4
-4.8
0.58
-53.3
-18.0
0.126
-22.8
0.647
81.9
2.8
13
0.908
52.4
-6.2
0.49
-63.4
-17.7
0.130
-31.4
0.666
71.0
2.6
14
0.898
41.3
-7.1
0.44
-73.5
-17.2
0.138
-38.0
0.699
64.0
1.5
15
0.888
34.1
-8.2
0.39
-80.2
-16.8
0.144
-45.6
0.734
55.9
0.5
16
0.815
24.1
-8.9
0.36
-85.3
-16.2
0.156
-54.7
0.750
49.3
-1.7
17
0.725
11.3
-9.9
0.32
-90.9
-15.5
0.167
-66.0
0.809
43.5
-3.1
18
0.792
-9.8
-10.2
0.31
-95.1
-16.6
0.147
-84.8
0.652
39.7
-4.2
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
相關(guān)PDF資料
PDF描述
ATF-521P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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ATF-53189-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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