參數(shù)資料
型號： ATF-521P8-BLKG
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù)： 3/24頁
文件大?。?/td> 248K
代理商： ATF-521P8-BLKG
11
Freq
Fmin
Γopt
Rn
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.60
0.19
162.00
3.0
20.0
1.0
0.72
0.30
164.00
2.6
18.3
2.0
0.81
0.44
176.97
2.0
15.9
3.0
0.92
0.56
-164.98
2.0
13.6
4.0
1.24
0.59
-155.51
3.4
11.1
5.0
1.50
0.70
-136.55
11.1
9.7
6.0
1.60
0.75
-128.59
16.0
8.7
7.0
1.88
0.81
-117.31
24.0
7.6
8.0
2.02
0.68
-109.54
28.8
5.6
Typical Noise Parameters, VDS = 4.5V, IDS = 120 mA
Figure 42. MSG/MAG and |S21|
2 vs.
Frequency at 4.5V, 120 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
ATF-521P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 120 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.913
-84.6
34.2
51.26
135.4
-36.4
0.015
49.0
0.423
-106.6
35.3
0.2
0.900
-125.0
30.3
32.80
115.4
-33.9
0.020
31.2
0.499
-139.4
32.1
0.3
0.896
-142.0
27.4
23.39
106.1
-33.4
0.021
25.3
0.522
-153.4
30.5
0.4
0.893
-152.3
25.1
17.89
100.3
-32.9
0.023
23.5
0.530
-161.1
28.9
0.5
0.882
-158.4
23.4
14.75
96.3
-32.6
0.023
22.5
0.531
-165.0
28.1
0.6
0.895
-164.2
21.8
12.36
92.9
-32.7
0.023
20.6
0.537
-168.4
27.3
0.7
0.893
-167.8
20.6
10.71
90.5
-32.4
0.024
20.4
0.537
-171.2
26.5
0.8
0.895
-170.8
19.5
9.39
88.0
-32.3
0.024
21.1
0.539
-173.1
25.9
0.9
0.897
-173.0
18.5
8.44
86.1
-32.2
0.025
22.1
0.539
-174.8
25.3
1
0.895
-175.5
17.6
7.59
83.6
-31.8
0.026
23.0
0.540
-176.9
24.7
1.5
0.893
176.0
14.1
5.07
75.3
-31.1
0.028
25.5
0.538
177.4
22.6
2
0.889
169.2
11.8
3.89
67.8
-30.0
0.032
27.9
0.528
172.2
20.8
2.5
0.882
163.6
10.0
3.15
61.2
-29.0
0.036
30.2
0.526
168.1
19.4
3
0.888
157.9
8.4
2.62
54.6
-28.2
0.039
30.2
0.528
163.9
16.9
4
0.883
146.8
5.9
1.97
40.7
-26.5
0.047
29.7
0.536
155.7
13.6
5
0.885
137.7
3.8
1.55
28.2
-25.2
0.055
26.3
0.556
148.1
11.6
6
0.892
128.0
2.1
1.28
16.7
-24.0
0.063
21.9
0.576
140.5
10.2
7
0.894
120.4
0.6
1.08
5.1
-22.8
0.072
18.2
0.591
133.1
8.9
8
0.880
105.7
-1.0
0.89
-8.7
-21.2
0.087
10.6
0.585
124.3
6.6
9
0.876
96.5
-1.9
0.81
-20.8
-20.1
0.099
3.2
0.602
114.9
5.7
10
0.879
84.4
-3.0
0.71
-32.7
-19.3
0.108
-5.2
0.605
104.5
4.7
11
0.889
72.8
-3.8
0.65
-44.3
-18.6
0.118
-13.5
0.624
94.2
4.3
12
0.881
62.4
-5.2
0.55
-56.0
-18.1
0.125
-23.1
0.642
83.4
2.7
13
0.893
54.0
-6.3
0.48
-66.6
-17.7
0.130
-31.4
0.664
72.4
2.2
14
0.891
42.1
-7.2
0.44
-72.6
-17.3
0.136
-38.4
0.697
65.1
1.2
15
0.888
34.1
-8.3
0.39
-79.2
-16.8
0.144
-45.9
0.732
56.7
0.4
16
0.845
25.3
-9.1
0.35
-89.6
-16.1
0.157
-55.0
0.751
50.4
-1.5
17
0.828
13.2
-11.2
0.28
-95.9
-15.6
0.167
-64.2
0.821
44.0
-3.9
18
0.827
-10.2
-11.0
0.28
-92.5
-16.6
0.147
-86.1
0.654
39.9
-4.3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
相關(guān)PDF資料
PDF描述
ATF-521P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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