參數(shù)資料
型號(hào)： ATF-33143-BLK
英文描述： Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
中文描述： 低噪聲假晶HEMT器件的表面貼裝塑料包裝
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 149K
代理商： ATF-33143-BLK
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ
_mag = 0.20
Γ
_ang = 124
°
(0.3 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-33143 DC Electrical Specifications
T
A
= 25
°
C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
I
dss[1]
Saturated Drain Current
V
P[1]
Pinchoff Voltage
I
d
Quiescent Bias Current
g
m[1]
Transconductance
I
GDO
Gate to Drain Leakage Current
I
gss
Gate Leakage Current
Units Min. Typ.
[2]
Max.
mA
175
V
-0.65
mA
—
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
GS
= -0.5 V, V
DS
= 4 V
V
DS
= 1.5 V, g
m
= I
dss
/V
P
mmho 360
V
GD
= 5 V
V
GD
= V
GS
= -4 V
f = 2 GHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
f = 900 MHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
f = 2 GHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
f = 900 MHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
f = 2 GHz
V
DS
= 4 V, I
DS
= 80 mA
5 dBm Pout/Tone
V
DS
= 4 V, I
DS
= 60 mA
f = 900 MHz
V
DS
= 4 V, I
DS
= 80 mA
5 dBm Pout/Tone
V
DS
= 4 V, I
DS
= 60 mA
f = 2 GHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
f = 900 MHz
V
DS
= 4 V, I
DS
= 80 mA
V
DS
= 4 V, I
DS
= 60 mA
237
-0.5
80
440
305
-0.35
—
—
1000
600
0.8
μ
A
μ
A
dB
—
42
0.5
0.5
0.4
0.4
15
15
21
21
33.5
32
32.5
31
22
21
21
20
NF
Noise Figure
dB
dB
13.5
16.5
G
a
Associated Gain
[3]
dB
Output 3
rd
Order
Intercept Point
[3]
dBm
30
OIP3
dBm
1 dB Compressed
Compressed Power
[3]
dBm
P
1dB
dBm
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
相關(guān)PDF資料
PDF描述
ATF-33143-TR2 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR1 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-36163-BLK 1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163 1.5-18 GHz Surface Mount Pseudomorphic HEMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-33143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-33143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-33143-G 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343
ATF-33143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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