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參數(shù)資料
| 型號： | ATF-33143-BLK |
| 英文描述： | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| 中文描述： | 低噪聲假晶HEMT器件的表面貼裝塑料包裝 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 149K |
| 代理商： | ATF-33143-BLK |
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
Low Noise Figure
Excellent Uniformity in
Product Specifications
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
0.5 dB Noise Figure
15 dB Associated Gain
22 dBm Output Power at
1dB Gain Compression
33.5 dBm Output 3
rd
Order
Intercept
Applications
Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-33143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450MHz to
10 GHz frequency range.
Pin Connections and
Package Marking
GATE
3
SOURCE
DRAIN
SOURCE
Note:
Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-33143-TR2 | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF33143 | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1 | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-36163-BLK | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163 | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-33143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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