參數(shù)資料
型號： ATF-33143-BLK
英文描述： Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
中文描述： 低噪聲假晶HEMT器件的表面貼裝塑料包裝
文件頁數(shù)： 11/14頁
文件大?。?/td> 149K
代理商： ATF-33143-BLK
ATF-33143 Die Model
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
ATF-33143 Model
NFET=yes
PFET=no
Vto=–0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Tau=
Betatce=
Delta1=0.2
Delta2=
Gscap=3
Cgs=1.6 pF
Gdcap=3
Cgd=0.32 pF
Rgd=
Tqm=
Vmax=
Fc=
Rd=.125
Rg=1
Rs=0.0625
Ld=0.00375 nH
Lg-0.00375 nH
Ls=0.00125 nH
Cds=0.08 pF
Crf=0.1
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
N=
Eg=
Vbr=
Vtotc=
Rin=
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
P=0.65
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
Al lParams=
Statz Model
MESFETM1
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.1 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=4
L
L6
L=0.2 nH
R=0.001
C
C2
C=0.11 pF
L
L7
C=0.6 nH
R=D 001
MSub
TLINP
TL4
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
VIA2
V1
D=20 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40 mil
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
TLINP
TL3
Z=Z2 Ohm
L=25 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINPTL9
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=D 0000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL8
Z=Z1 Ohm
L=15 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=26.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL6
Z=Z1 Ohm
L=15 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
L
L1
L=0.6 nH
R=0.001
L
L4
L=0.2 nH
R=0.001
GaAsFET
FET1
Model=MESFETN1
Mode=nonlinear
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1 DE+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
相關(guān)PDF資料
PDF描述
ATF-33143-TR2 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR1 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-36163-BLK 1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163 1.5-18 GHz Surface Mount Pseudomorphic HEMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-33143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-33143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-33143-G 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343
ATF-33143-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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