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參數(shù)資料
| 型號： | ATF-36163-BLK |
| 英文描述： | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| 中文描述： | 1.5-18 GHz的表面貼裝假晶HEMT器件 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 96K |
| 代理商： | ATF-36163-BLK |
5-79
1.5–18 GHz Surface Mount
Pseudomorphic HEMT
Technical Data
ATF-36163
Features
Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Cost Surface Mount
Small Plastic Package
Tape-and-Reel Packaging
Option Available
Applications
12 GHz DBS Downconverters
4 GHz TVRO Downconverters
S or L Band Low Noise
Amplifiers
Surface Mount Package
SOT-363 (SC-70)
Additionally, the ATF-36163 has
low noise-resistance, which
reduces the sensitivity of noise
performance to variations in
input impedance match. This
feature makes the design of broad
band low noise amplifiers much
easier. The performance of the
ATF-36163 makes this device the
ideal choice for use in the 2nd or
3rd stage of low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct
Broadcast Satellite (DBS) TV
systems, C-band TV Receive Only
(TVRO) LNAs, Multichannel
Multipoint Distribution Systems
(MMDS), X-band Radar detector
and other low noise amplifiers
operating in the 1.5 –18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery
(width) of 200 microns. Proven
gold-based metallization system
and nitride passivation assure
rugged, reliable devices.
Description
The Hewlett-Packard ATF-36163
is a low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), in the SOT-363 (SC-70)
package. When optimally matched
for minimum noise figure, it will
provide a noise figure of 1 dB at
12 GHz and 0.6dB at 4 GHz.
Pin Connections and
Package Marking
DRAIN
SOURCE
3
SOURCE
SOURCE
GATE
SOURCE
Note:
Package marking provides
orientation and identification.
5965-4747E
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-36163 | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1 | 1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-46171 | 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化鎵 FET) |
| ATF-511P8 | Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-54143 | Single Voltage E-pHEMT Low Noise +36 dBm OIP3 in SC-70 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-36163-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-36163-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-36163-G | 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163 |
| ATF-36163-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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