參數(shù)資料
型號: AS6WA25616
廠商: Alliance Semiconductor Corporation
英文描述: 3.0V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(3.0V 到 3.6V 256K×16 Intelliwatt 低功耗 CMOS 靜態(tài)RAM(帶單片使能))
中文描述: 3.0V至3.6V 256K × 16 Intelliwatt低功耗CMOS SRAM的同一個芯片上,使(3.0V到3.6V的256K × 16 Intelliwatt低功耗的CMOS靜態(tài)隨機存儲器(帶單片使能))
文件頁數(shù): 5/9頁
文件大?。?/td> 180K
代理商: AS6WA25616
AS6WA25616
10/6/00
ALLIANCE SEMICONDUCTOR
5
Write cycle (over the operating range)
11
Parameter
Write cycle time
Shaded areas indicate preliminary information.
Write waveform 1 (WE controlled)
10,11
Write waveform 2 (CS controlled)
10,11
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
t
BW
Min
55
Max
Unit
ns
Notes
Chip select to write end
40
ns
12
Address setup to write end
Address setup time
40
0
ns
ns
12
Write pulse width
35
ns
Address hold from end of write
Data valid to write end
0
ns
ns
25
Data hold time
0
ns
4, 5
Write enable to output in high Z
Output active from write end
0
5
20
ns
ns
4, 5
4, 5
UB/LB low to end of write
35
ns
Address
CS
LB, UB
WE
D
IN
D
OUT
t
WC
t
CW
t
BW
t
AW
t
AS
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
Data undefined
High Z
Data valid
Address
CS
LB, UB
WE
D
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
D
OUT
Data undefined
High Z
High Z
t
AS
t
AW
Data valid
t
CLZ
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