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參數資料
| 型號： | AS4SD16M16 |
| 英文描述： | 256000Kbits 16M x 16 Replacement with DSCC 5962-n/a | SDRAM |
| 中文描述： | 256000Kbits 16米x 16置換籍局5962氮/ 1 |內存 |
| 文件頁數： | 5/51頁 |
| 文件大小： | 1071K |
| 代理商： | AS4SD16M16 |
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S DR A M
AS4SD16M16
Austin Semiconductor, Inc.
AS4SD16M16
Rev. 1.5 6/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
FIGURE 1: Mode Register Definition
TABLE 1: Burst Definition
TYPE = SEQUENTIAL TYPE = INTERLEAVED
A0
0
1
0-1
1-0
0-1
1-0
A1 A0
0 0
0 1
1 0
1 1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
A2 A1 A0
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1-
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn, Cn+1, Cn+2, Cn+3,
Cn+4…
…Cn-1,
Cn…
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Full
Page
(y)
n=A0-A8
(location 0-y)
Not Supported
4
8
BURST
LENGTH
STARTING
COLUMN
ORDER OF ACCESSES WITHIN A BURST
2
NOTES:
1. For full-page access: y=512
2. For a burst length of two, A1-A8 select the block-of-two burst;
A0 selects the starting column within the block.
3. For a burst length of four, A2-A8 select the block-of-four burst;
A0-A1 selects the starting column within the block.
4. For a burst length of eight, A3-A8 select the block-of-eight burst;
A0-A2 selects the starting column within the block.
5. For a full-page burst, the full row is selected and A0-A8 select the
starting column.
6. Whenever a boundary of the block is reached within a given
sequence above, the following access wraps within the block.
7. For a burst length of one, A0-A8 select the unique column to be
accessed, and mode register bit M3 is ignored.
相關PDF資料 |
PDF描述 |
|---|---|
| AS4SD1M16S-10 | x16 SDRAM |
| AS4SD1M16S-12 | x16 SDRAM |
| AS4SD1M16S-8A | x16 SDRAM |
| AS4SD4M16A2-10 | x16 SDRAM |
| AS4SD4M16A2-8 | x16 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AS4SD16M16_09 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory |
| AS4SD16M16DG-75 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory |
| AS4SD16M16DG-75/ET | 制造商:Micross Components 功能描述:SDRAM-SDR,256MB - Trays |
| AS4SD16M16DG-75/IT | 制造商:Micross Components 功能描述:SDRAM-SDR,256MB - Trays |
| AS4SD16M16DG-75/IT+ | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory |
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