參數(shù)資料
型號: AS4LC1M16S1
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 1M × 16 CMOS Synchronous DRAM(3.3V 1M × 16 CMOS同步動態(tài)RAM)
中文描述: 3.3V的100萬× 16個CMOS同步DRAM(3.3V的100萬× 16個CMOS同步動態(tài)RAM)的
文件頁數(shù): 5/11頁
文件大小: 230K
代理商: AS4LC1M16S1
AS7C3364PFS32A
AS7C3364PFS36A
2/1/01
Alliance Semiconductor
P. 5 of 11
TQFP thermal resistance
* This parameter is sampled.
DC electrical characteristics
DC electrical characteristics for 2.5V I/O operation
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)
*
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per EIA/
JESD51
θ
JA
46
°
C/W
Thermal resistance
(junction to top of case)
*
θ
JC
2.8
°
C/W
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min Max Min Max Min Max Min Max
Input leakage
current
*
* LBO pin has an internal pull-up and input leakage = ±10
μ
a.
Note: ICC given with no output loading. ICC increases with faster cycles times and greater output loading.
|I
LI
|
V
DD
= Max, V
IN
= GND to V
DD
2
2
2
2
μA
Output leakage
current
|I
LO
|
OE
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
CE0 = V
IL
, CE1 = V
IH
, CE2 = V
IL
,
f = f
Max
, I
OUT
= 0 mA
Deselected, f = f
Max
, ZZ
V
IL
Deselected, f = 0, ZZ
0.2V
all V
IN
0.2V or
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
V
DD
– 0.2V
All V
IN
V
IL
or
V
IH
I
OL
= 8 mA, V
DDQ
= 3.465V
I
OH
= –4 mA, V
DDQ
= 3.135V
2
2
2
2
μA
Operating power
supply current
I
CC
475
450
425
325
mA
Standby power
supply current
I
SB
130
110
100
90
mA
I
SB1
30
30
30
30
I
SB2
30
30
30
30
Output voltage
V
OL
V
OH
0.4
0.4
0.4
0.4
V
2.4
2.4
2.4
2.4
Parameter
Symbol
Test conditions
OE
V
IH
, V
DD
= Max,
V
OUT
= GND to V
DD
I
OL
= 2 mA, V
DDQ
= 2.65V
I
OH
= –2 mA, V
DDQ
= 2.35V
–166
–150
–133
–100
Unit
Min Max Min Max Min Max Min Max
Output leakage
current
|I
LO
|
–1
1
–1
1
–1
1
–1
1
μA
Output voltage
V
OL
V
OH
0.7
0.7
0.7
0.7
V
1.7
1.7
1.7
1.7
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