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參數(shù)資料
| 型號： | AR629A-U9MIO |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | MICROCIRCIT DATA SHEET |
| 中文描述： | MICROCIRCIT數(shù)據(jù)資料 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大小： | 63K |
| 代理商： | AR629A-U9MIO |
MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC: SUBSYSTEM READ CHARACTERISTICS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
TWDS
DSO Pulse Width
Vdd = 4.75V, Vdd = 5.25V
6T-25
nS
9, 10,
11
TWRWT
Read WAIT Pulse
Width
Vdd = 4.75V, Vdd = 5V +5%
122T
nS
9, 10,
11
TWWH
WAIT Pulse Width
High
4T+22
nS
9, 10,
11
AC: SUBSYSTEM WRITE CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
TDASDS
Delay from ASO
HIGH to DSO Low
Vdd = 4.75V, Vdd = 5.25V
4T-25
4T+25
nS
9, 10,
11
TDBAK
BUSA Response
Time
TG = 2, Vdd = 5V +5%
0
130T
nS
9, 10,
11
TG = 3, Vdd = 5V +5%
0
162T
nS
9, 10,
11
TG = 4, Vdd = 5V +5%
0
194T
nS
9, 10,
11
TG = 5, Vdd = 5V +5%
0
226T
nS
9, 10,
11
TG = 6, Vdd = 5V +5%
0
258T
nS
9, 10,
11
TDBAK1
BUSA Response
Time (1WAT)
TG = 2, Vdd = 5V +5%
0
126T
nS
9, 10,
11
TG = 3, Vdd = 5V +5%
0
158T
nS
9, 10,
11
TG = 4, Vdd = 5V +5%
0
190T
nS
9, 10,
11
TG = 5, Vdd = 5V +5%
0
222T
nS
9, 10,
11
TG = 6, Vdd = 5V +5%
0
254T
nS
9, 10,
11
6
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