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參數(shù)資料
| 型號： | AR629A-U9MIO |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | MICROCIRCIT DATA SHEET |
| 中文描述： | MICROCIRCIT數(shù)據(jù)資料 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大小： | 63K |
| 代理商： | AR629A-U9MIO |
MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
(Continued)
Note 1:
Tested during initial qual only and after process/design changes; tested at 25 C
only.
TTL input only.
All output leakage current is measured at tri-state.
Same as NSC symbol TDAE.
Same as NSC symbol TDBUSQRIVS.
Same as NSC symbol TDRIVSRIVS.
Same as NSC symbol TDES.
Same as NSC symbol TDSE.
Same as NSC symbol TWTXO.
Note 10: These parameters are measured at 2.0V on the rising and falling edges of a high pulse
and extrapolated to 0.8V on the rising and falling edges of a low pulse.
Note 11: Same as NSC symbol TWTXOH and TWTXOL.
Note 12: TWH is measured from 0.75Vdd on the clock rising edge and 0.75Vdd -1.0V on the clock
falling edge. TWL is measured from 1V on the clock falling edge and 2V on the clock
rising edge. The clock used to measure these parameters has a minimum slew rate of
1.0V/nS.
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
15
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