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參數(shù)資料
| 型號： | AR629A-U9MIO |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | MICROCIRCIT DATA SHEET |
| 中文描述： | MICROCIRCIT數(shù)據(jù)資料 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 63K |
| 代理商： | AR629A-U9MIO |
MNAR629A-X REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC: SUBSYSTEM READ CHARACTERISTICS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
TDBABR
Time from BUSA
low to BUSR
Tri-State
0 Wait
17T+61
nS
9, 10,
11
1 Wait
21T+61
nS
9, 10,
11
Max Wait
148T+6
1
nS
9, 10,
11
TDBRBA
BUSR High to BUSA
High Delay
31
nS
9, 10,
11
TDBRQ
Delay from RICK
to BUSR Low
80
nS
9, 10,
11
TDBSW
Time BUSA Low
Prior to RICK
1T-10
5T+26
nS
9, 10,
11
TDDS
DSO Delay from
RICK
80
nS
9, 10,
11
TDDSBR
DSO High to BUSR
Tri-State
Vdd = 4.75V, Vdd = 5.25V
1T-20
1T+50
nS
9, 10,
11
TDIO
IOCK high after
rising edge of
RICK
37
nS
9, 10,
11
TDRDSH
RICK to DSO High
Vdd = 4.75V, Vdd = 5.25V
1T
1T+40
nS
9, 10,
11
TDRW
RWO Delay from
RICK
80
nS
9, 10,
11
THASA
AD Hold Time from
ASO High
Vdd = 4.75V, Vdd = 5.25V
2T-35
2T+40
nS
9, 10,
11
THAW
Wait Hold after
RICK
22
nS
9, 10,
11
THDI
Data in Hold
after RICK
30
nS
9, 10,
11
THDS
DSO Hold after
WAIT
Vdd = 4.75V, Vdd = 5V +5%
5T
9T+30
nS
9, 10,
11
THRW
RWO Hold after
WAIT
Vdd = 4.75V, Vdd = 5V +5%
6T
10T+30
nS
9, 10,
11
THWAS
ASO Hold after
WAIT
Vdd = 5V +5%
6T
10T+30
nS
9, 10,
11
TSDI
Data Setup Prior
to RICK
30
nS
9, 10,
11
TSWA
WAIT Setup to
RICK
22
nS
9, 10,
11
TWAS
ASO Pulse Width
Vdd = 4.75V, Vdd = 5.25V
2T-25
2T+25
nS
9, 10,
11
5
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