參數(shù)資料
型號: APTGT75DH120T
廠商: Advanced Power Technology Ltd.
英文描述: Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
中文描述: 非對稱-橋快速戴場站IGBT功率模塊
文件頁數(shù): 5/5頁
文件大?。?/td> 288K
代理商: APTGT75DH120T
APTGT75DH120T
A
APT website – http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
25
50
75
100
125
150
175
200
0
0.4
0.8
1.2
V
F
(V)
1.6
2
2.4
I
C
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0
20
40
60
I
C
(A)
80
100
120
F
V
CE
=600V
D=50%
R
G
=4.7
T
J
=125°C
T
c
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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