參數(shù)資料
型號(hào)： APTGT75DH120T
廠商： Advanced Power Technology Ltd.
英文描述： Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
中文描述： 非對(duì)稱-橋快速戴場(chǎng)站IGBT功率模塊
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 288K
代理商： APTGT75DH120T
APTGT75DH120T
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
110
75
175
±20
357
150A @ 1150V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
A
V
W
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1
NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1
V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Fast Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT
Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGT75DH120T3G 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 110A SP3
APTGT75DH120TG 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGT75DH60T1G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module
APTGT75DH60T3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGT75DH60TG 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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