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參數(shù)資料
| 型號： | APTGT75DH120T |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| 中文描述： | 非對稱-橋快速戴場站IGBT功率模塊 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 288K |
| 代理商： | APTGT75DH120T |
APTGT75DH120T
A
APT website – http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Test Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 75A
V
GE
= V
CE
, I
C
= 2 mA
V
GE
= 20V, V
CE
= 0V
Min
5.0
Typ
1.7
2.0
5.8
Max
250
2.1
6.5
400
Unit
μA
T
j
= 25°C
T
j
= 125°C
V
CE(sat)
Collector Emitter Saturation Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
Min
Typ
5345
280
240
280
40
450
75
290
45
550
90
7
8
Max
Unit
pF
ns
ns
mJ
Test Conditions
Min
1200
Typ
75
1.5
1.4
150
250
7
13.5
Max
250
500
2.0
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
A
V
F
Diode Forward Voltage
I
F
= 75A
V
t
rr
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 600V
di/dt =2000A/μs
μC
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| APTGT75DH120T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 110A SP3 |
| APTGT75DH120TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT75DH60T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT75DH60T3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75DH60TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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