參數(shù)資料
型號: APTGF150H120
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge NPT IGBT Power Module
中文描述: 全-橋不擴散核武器條約IGBT功率模塊
文件頁數(shù): 5/5頁
文件大?。?/td> 226K
代理商: APTGF150H120
APTGF150H120
A
APT website – http://www.advancedpower.com
5 - 5
0
50
100
150
200
250
300
Area
0
300
600
900
1200
1500
I
C
,
V
CE
, Collector to Emitter Voltage (V)
Minimum Switching Safe Operating
Switching times vs gate resistor
tdon
tdoff
tr
tf
10
100
1000
t
10000
0
10
Gate resistance (Ohms)
20
30
40
V
CE
= 600V, V
GE
=
±
15V
I
C
=150A, T
J
= 125°C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
0
20
40
60
80
100
0
50
100
150
200
I
C
, Collector Current (A)
F
Operating Frequency vs Collector Current
V
CE
= 800V
D = 50%
R
G
= 5
T
J
= 125°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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