參數(shù)資料
型號(hào): APTGF150H120
廠商: Advanced Power Technology Ltd.
英文描述: Full - Bridge NPT IGBT Power Module
中文描述: 全-橋不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 226K
代理商: APTGF150H120
APTGF150H120
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
200
150
400
±20
1040
300A @ 1200V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
E2
G2
G4
E4
E3
G1
E1
0/VBUS
VBUS
OUT2
OUT1
G3
V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Full - Bridge
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
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