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參數(shù)資料
| 型號： | APT30GP60B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 92K |
| 代理商： | APT30GP60B |
0
APT30GP60B
T
J
=
125°C, V
GE
=
10V
or 15V
V
CE
= 400V
R
= 5
L = 100 μH
V
GE
= 15V
V
GE
= 10V
V
GE
=15V,T
J
=125°C
V
CE
= 400V
T
J
J
=125°C
R
= 5
L = 100 μH
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
10
20
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
T
J
=
25 or 125°C,V
GE
=
10V
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
V
CE
= 400V
V
GE
= +15V
R
G
= 5
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
25
50
75
100
125
V
GE
=10V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
GE
=10V,T
J
=25°C
T
J
=
25°C, V
GE
=
10V
or 15V
100
90
80
70
60
50
40
30
20
10
0
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
1200
800
400
0
T
J
=
125°C, V
GE
=
10V
or 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 5
V
CE
= 400V
V
GE
= +15V
R
G
= 5
E
on2,
60A
E
off,
60A
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
60A
E
off,
60A
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
V
CE
= 400V
V
GE
= +15V
T
J
= 125
°
C
T
J
=
125°C,V
GE
=
10V
T
J
=
125°C,V
GE
=
15V
T
J
=
25°C,V
GE
=
10V
T
J
=
25°C, V
GE
=
10V
or 15V
T
J
=
25°C,V
GE
=
15V
25
20
15
10
5
0
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
2000
1500
1000
500
0
T
J
=
25 or 125°C,V
GE
=
15V
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