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參數(shù)資料
| 型號： | APT30GP60B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT30GP60B |
0
<0.5 % DUTY CYCLE
3.5
TYPICAL PREFORMANCE CURVES
60
T
C
=-55°C
T
C
=125°C
T
C
=25°C
V
CE
=480V
V
CE
=300V
V
CE
=120V
250 VGE = 10V.
<0.5 % DUTY CYCLE
50
250 VGE = 15V.
<0.5 % DUTY CYCLE
50
250 VGE = 15V.
<0.5 % DUTY CYCLE
3
TJ = 25°C
TJ = -55°C
TJ = 125°C
T
C
=-55°C
T
C
=25°C
T
C
=125°C
<0.5 % DUTY CYCLE
180
I
C
= 30A
T
J
= 25°C
B
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
APT30GP60B
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
200
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
T
, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
60
40
30
20
10
0
14
12
10
8
6
4
2
0
3.5
2.5
2
1.5
1
0.5
0
120
100
80
60
40
20
0
I
C
=
60A
I
C
=
30A
I
C
=
15A
I
C
=
60A
I
C
=
30A
I
C
=
15A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
90 100
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
40
30
20
10
0
160
140
120
100
80
60
40
20
0
4
3
2.5
2
1.5
1
0.5
0
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GP60B2DL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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