- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366567 > APT30GP60B (Advanced Power Technology Ltd.) POWER MOS 7 IGBT PDF資料下載
參數(shù)資料
| 型號： | APT30GP60B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT30GP60B |
0
APT30GP60B
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 30A
T
J
= 150°C, R
G
= 5
,
V
GE
=
15V, L = 100μH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
(Peak)
= 400V
V
GE
= 15V
I
C
= 30A
R
G
= 5
T
J
= +25°C
Inductive Switching (125°C)
V
CC
(Peak)
= 400V
V
GE
= 15V
I
C
= 30A
R
G
= 5
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching SOA
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
3200
295
20
7.5
90
20
30
120
13
18
55
46
260
335
250
13
18
84
80
260
508
518
330
750
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
UNIT
°C/W
gm
MIN
TYP
MAX
.27
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
Θ
JC
R
Θ
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30GT60AR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BRD | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60CR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60KR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GP60B2DL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。