- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366567 > APT30GT60CR (Advanced Power Technology Ltd.) The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. PDF資料下載
參數(shù)資料
| 型號(hào)： | APT30GT60CR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的迅雷是IGBT的高壓電源IGBT的新一代。 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | APT30GT60CR |
PRELIMINARY
Characteristic / Test Conditions
Symbol
G
C
E
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
±100
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55°C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700μA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
μA
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
C1
C2
CM
LM
AS
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K )
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11
Single Pulse Avalanche Energy
2
T
C
= 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT30GT60AR
600
600
15
±20
40
30
80
60
65
160
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
APT30GT60AR
600V
40A
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
Hermetic Package
High Freq. Switching to 150KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
0
TO-3
(TO-204AE)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30GT60KR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30M17JLL | GIGATRUE 550 CAT PATCH CABLE NO BOOT 3FT BEIGE |
| APT30M19JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| APT30M19JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M30LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GT60KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60KRG | 功能描述:IGBT 600V 64A 250W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT30M17JFLL | 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M17JLL | 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M17JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。