參數(shù)資料
型號: APT30GT60CR
廠商: Advanced Power Technology Ltd.
英文描述: The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述: ⑩的迅雷是IGBT的高壓電源IGBT的新一代。
文件頁數(shù): 2/2頁
文件大?。?/td> 27K
代理商: APT30GT60CR
PRELIMINARY
gfe
Forward Transconductance
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
DYNAMIC CHARACTERISTICS
APT30GT60AR
UNIT
°C/W
MIN
TYP
MAX
0.78
40
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
JC
R
JA
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
C
= I
C2
G
= 10
Inductive Switching (150°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
C
= I
C2
G
= 10
J
= +150°C
Inductive Switching (25°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
1600
155
90
140
60
12
14
55
190
140
18
30
300
25
0.5
1.2
1.7
18
30
260
20
1.3
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25 ,
L = 144μH, T
j
= 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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APT30M17JLL 功能描述:MOSFET N-CH 300V 135A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*
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