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參數(shù)資料
| 型號： | APT30GF60JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 45 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 213K |
| 代理商： | APT30GF60JCU2 |
APT30GF60JCU2
APT
30GF60JCU2
–
Rev
0
Septem
be
r,
2009
www.microsemi.com
5 – 6
VGE = 15V
10
20
30
40
50
0
10
20
3040
5060
70
ICE, Collector to Emitter Current (A)
td(
on),
Turn-On
De
la
y
Tim
e
(ns
)
Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 6.8
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
25
50
75
100
125
0
10
20
30
40
50
60
70
ICE, Collector to Emitter Current (A)
td(
o
ff
),
Turn-
Of
fD
e
la
y
Ti
me
(ns
)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 6.8
VGE=15V,
TJ=125°C
0
10
20
30
40
50
0
102030
40506070
ICE, Collector to Emitter Current (A)
tr,
R
ise
Ti
me
(
n
s)
Current Rise Time vs Collector Current
VCE = 400V
RG = 6.8
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
0
10
2030
4050
6070
ICE, Collector to Emitter Current (A)
tf
,F
a
ll
T
ime
(
n
s
)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 6.8
TJ=125°C,
VGE=15V
0
0.125
0.25
0.375
0.5
0
1020
3040
5060
70
ICE, Collector to Emitter Current (A)
E
on
,Turn-
On
Energy
Loss
(
m
J)
Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 6.8
TJ = 125°C
0
0.5
1
1.5
2
0
10
20304050
6070
ICE, Collector to Emitter Current (A)
E
of
f,
Turn-
off
En
e
rgy
Loss
(mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 6.8
Eon, 30A
Eoff, 30A
0
0.25
0.5
0.75
1
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
it
chi
ng
Energy
Loss
es
(mJ)
VCE = 400V
VGE = 15V
TJ= 125°C
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
I C
,Coll
ec
tor
Curr
ent
(A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GF60JU2 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設(shè)備封裝:SOT-227B |
| APT30GF60JU3 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設(shè)備封裝:SOT-227B |
| APT30GL100BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 |
| APT30GN60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT30GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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