- 您現在的位置：買賣IC網 > PDF目錄51263 > APT30GF60JCU2 (MICROSEMI POWER PRODUCTS GROUP) 45 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數資料
| 型號： | APT30GF60JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 45 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 213K |
| 代理商： | APT30GF60JCU2 |
APT30GF60JCU2
APT
30GF60JCU2
–
Rev
0
Septem
be
r,
2009
www.microsemi.com
3 – 6
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
IGBT
0.81
RthJC
Junction to Case Thermal Resistance
SiC chopper Diode
2.25
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical IGBT Performance Curve
Cies
Cres
Coes
10
100
1000
10000
0
1020
304050
C
,Capac
itance
(pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
al
I
m
pedan
ce
(
°C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
ZCS
ZVS
0
40
80
120
160
200
240
280
0
1020
3040
50
IC, Collector Current (A)
F
ma
x,
Oper
ati
ng
F
requ
e
ncy
(kHz
)
VCE = 400V
D = 50%
RG = 6.8
TJ = 125°C
TC= 75°C
Emitter
Gate
Collector
Cathode
相關PDF資料 |
PDF描述 |
|---|---|
| APT30GF60JU3 | 58 A, 600 V, N-CHANNEL IGBT |
| APT30GP60B | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GP60BG | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GP60S | 100 A, 600 V, N-CHANNEL IGBT |
| APT30GP60SG | 100 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GF60JU2 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GF60JU3 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GL100BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 |
| APT30GN60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT30GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復。