參數(shù)資料
型號(hào)： APT15GP90B
廠商： Advanced Power Technology Ltd.
英文描述： The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
中文描述： 功率MOS 7 IGBT的是一個(gè)高壓電源IGBT的新一代。
文件頁數(shù)： 4/6頁
文件大?。?/td> 165K
代理商： APT15GP90B
0
APT15GP90B
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
T
J
=
125°C,V
GE
=
15V
T
J
=
25°C,V
GE
=
15V
V
CE
=
600V
R
=
5
L = 100 μH
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
2000
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
0
10
20
30
40
50
0
25
50
75
100
125
V
CE
= 600V
V
GE
= +15V
R
G
= 5
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
V
CE
= 600V
V
GE
= +15V
R
G
= 5
V
CE
= 600V
V
GE
= +15V
R
G
= 5
R
G
=
5
, L
=
100
μ
H, V
CE
=
600V
R
G
=
5
, L
=
100
μ
H, V
CE
=
600V
V
CE
= 600V
T
J
= 25°C
,
T
J
=125°C
R
= 5
L = 100 μH
14
12
10
8
6
4
2
0
30
25
20
15
10
5
0
2000
1500
1000
500
0
2000
1500
1000
500
0
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
1200
1000
800
600
400
200
0
1500
1000
500
0
V
GE
= 15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
9A
E
off,
9A
E
on2,
30A
E
off,
15A
E
on2,
15A
E
off,
30A
E
on2,
9A
E
off,
9A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT15GP90B_06 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs
APT15GP90BDQ1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT15GP90BDQ1G 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT15GP90BG 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT15GP90K 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
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