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參數(shù)資料
| 型號(hào)： | APT15GP90B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 功率MOS 7 IGBT的是一個(gè)高壓電源IGBT的新一代。 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | APT15GP90B |
0
APT15GP90B
TYPICAL PERFORMANCE CURVES
60
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
100
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
B
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
150
250TJ = 25°C.
<0.5 % DUTY CYCLE
T
C
=125°C
T
C
=25°C
V
CE
= 720V
V
CE
= 450V
V
CE
= 180V
25 VGE = 10V.
<0.5 % DUTY CYCLE
25 VGE = 15V.
<0.5 % DUTY CYCLE
50
25 VGE = 15V.
<0.5 % DUTY CYCLE
0
I
C
= 15A
T
J
= 25°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
T
C
=25°C
T
C
=125°C
<0.5 % DUTY CYCLE
I
C
= 7.5A
I
C
= 15A
I
C
=30A
I
C
=30A
I
C
= 7.5A
40
30
20
10
0
80
60
40
20
0
6
5
4
3
2
1
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
50
40
30
20
10
0
14
12
10
8
6
4
2
0
4
3.5
3
2.5
2
1.5
1
0.5
50
40
30
20
10
0
I
C
= 15A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GP90B_06 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs |
| APT15GP90BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP90BDQ1G | 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GP90BG | 功能描述:IGBT 900V 43A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GP90K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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