參數(shù)資料
型號(hào)： APT200GN60J
廠商： Advanced Power Technology Ltd.
英文描述： Intergrated Gate Resistor: Low EMI, High Reliability
中文描述： 集成門(mén)極電阻：低EMI，高可靠性
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 199K
代理商： APT200GN60J
0
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 3.2mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 125°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
UNIT
Volts
mA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
APT200GN60J
600
±20
250
110
600
600A @600V
568
-55 to 150
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
APT200GN60J
600V
APT Website - http://www.advancedpower.com
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs
have ultra low V
CE(ON)
and are ideal for low frequency applications that require
absolute minimum conduction loss. Easy paralleling is a result of very tight
parameter distribution and a slightly positive V
CE(ON)
temperature coefficient.
A built-in gate resistor ensures extremely reliable operation, even in the event
of a short circuit fault. Low gate charge simplifies gate drive design and
minimizes losses.
600V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
10μs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
Applications:
welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
G
C
E
MIN
TYP
MAX
600
5
5.8
6.5
1.05
1.45
1.85
1.65
1.15
1.19
4
TBD
600
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT200GN60JDQ4 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GN60JDQ4G 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GN60JG 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GT60JR 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube
APT200GT60JRDL 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
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