參數(shù)資料
型號(hào)： APT200GN60J
廠商： Advanced Power Technology Ltd.
英文描述： Intergrated Gate Resistor: Low EMI, High Reliability
中文描述： 集成門極電阻：低EMI，高可靠性
文件頁數(shù)： 2/6頁
文件大?。?/td> 199K
代理商： APT200GN60J
0
APT200GN60J
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
Volts
oz
gm
Ibin
Nm
MIN
TYP
MAX
.22
N/A
2500
1.03
29.2
10
1.1
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (
50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
R
θ
JC
R
θ
JC
V
Isolation
W
T
Torque
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
T
J
= 150°C, R
G
= 5
7
,
V
GE
=
15V, L = 100μH,V
CE
= 600V
V
CC
= 480V, V
GE
= 15V,
T
J
= 125°C, R
G
= 5
7
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 100A
R
G
= 5
7
T
J
= +25°C
Inductive Switching (125°C)
V
CC
=400V
V
GE
= 15V
I
C
= 100A
R
G
= 5
7
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
14100
4610
4000
8.2
1180
85
660
600
10
55
20
1050
50
TBD
1720
2810
55
20
1150
60
TBD
1955
2865
UNIT
pF
V
nC
A
μ
s
ns
μ
J
ns
μ
J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
CES
includes both IGBT and FRED leackage.
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24)
5 E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22)
6 E
off
is the clamped induvtive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23)
7 R
G
is external gate resistance, not including R
nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT200GN60JDQ4 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GN60JDQ4G 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GN60JG 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT200GT60JR 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube
APT200GT60JRDL 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
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