參數(shù)資料
型號(hào)： APT15GP60BDF1
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 IGBT
中文描述： IGBT的功率MOS 7
文件頁(yè)數(shù)： 9/9頁(yè)
文件大?。?/td> 129K
代理商： APT15GP60BDF1
0
APT15GP60BDF1
T0-247 Package Outline
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
3.55 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Collector
Emitter
C
(
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
/dt - Current Rate of Decrease, Rate of Diode
Current Change Through Zero Crossing
From Positive to Negative.
I
RRM
- Maximum Reverse Recovery Current.
I
F
- Forward Conduction Current
trr -
Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
Slope = di
M
/dt
TRANSIENT THERMAL IMPEDANCE MODEL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.698
0.438
0.165
0.00173F
0.0395F
0.670F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT15GP60BDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT15GP60BDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A TO-247 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A 250W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT15GP60BDQ1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT15GP60BDQ1G 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT15GP60BG 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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