參數(shù)資料
型號： APT15GP60BDF1
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 IGBT
中文描述： IGBT的功率MOS 7
文件頁數(shù)： 4/9頁
文件大小： 129K
代理商： APT15GP60BDF1
0
APT15GP60BDF1
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=
25°C, V
GE
=
10V
or 15V
V
CE
= 400V
R
= 5
L = 100 μH
V
GE
=
15V,T
J
=125°C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125°C
V
GE
=
10V,T
J
=25°C
V
GE
=
15V,T
J
=25°C
T
J
=
25°C, V
GE
=
10V
or 15V
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
700
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
V
= 400V
L = 100 μH
R
G
= 5
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
10V
V
CE
= 400V
V
GE
= +15V
R
G
= 5
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
V
CE
= 400V
L = 100 μH
R
G
= 5
T
J
=125°C, V
GE
=15V
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=125°C,V
GE
=10V
T
J
= 25°C, V
GE
=10V
T
J
= 25°C, V
GE
=15V
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
0
5
10
15
20
25
30
5
10
15
20
25
30
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
18
16
14
12
10
8
6
4
2
0
25
20
15
10
5
0
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
80
60
40
20
0
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
E
off
30A
E
on2
30A
E
on2
7.5A
E
off
15A
E
on2
15A
E
off
7.5A
E
on2
7.5A
E
off
15A
E
on2
15A
E
on2
30A
E
off
30A
E
off
7.5A
V
CE
= 400V
T
J
R
= 5
L = 100 μH
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參數(shù)描述
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APT15GP60BDQ1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT15GP60BDQ1G 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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