- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36706 > APT150GN60JDQ4 220 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT150GN60JDQ4 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 220 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 533K |
| 代理商： | APT150GN60JDQ4 |
050-7625
Rev
A
4-2006
APT150GN60JDQ4
TYPICAL PERFORMANCE CURVES
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
D = 0.9
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 103°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 150A
Forward Voltage
I
F = 300A
I
F = 150A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.83
2.33
1.47
APT100GN60LDQ4
100
146
1000
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
34
-
160
-
290
-
5
-
220
-
1530
-
13
-
100
-
2890
-
44
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 100A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 100A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 100A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
SINGLE PULSE
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
0.0673
0.188
0.0743
0.0182
0.361
5.17
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT150GN60LDQ4 | 220 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT15F50KF | 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT15GP60BDF1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1G | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT150GN60LDQ4 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT150GN60LDQ4G | 功能描述:IGBT 600V 220A 536W TO-264L RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT150GT120JR | 功能描述:IGBT 1200V 170A 830W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT-15A | 制造商:OPTIFUSE 功能描述: |
| APT15D100B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。