參數(shù)資料
型號: APT13GP120BDQ1
元件分類: IGBT 晶體管
英文描述: 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247, 3 PIN
文件頁數(shù): 9/9頁
文件大?。?/td> 431K
代理商: APT13GP120BDQ1
050-7446
Rev
B
5-2005
APT13GP120BDQ1(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 33. Diode Test Circuit
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT10078BLL
相關(guān)PDF資料
PDF描述
APT150GN60JDQ4 220 A, 600 V, N-CHANNEL IGBT
APT150GN60LDQ4 220 A, 600 V, N-CHANNEL IGBT, TO-264AA
APT15F50KF 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT15GP60BDF1 56 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT15GP60BDQ1 56 A, 600 V, N-CHANNEL IGBT, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT13GP120BDQ1G 功能描述:IGBT 1200V 41A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT13GP120BG 功能描述:IGBT 1200V 41A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT13GP120K 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT13GP120KG 功能描述:IGBT 1200V 41A 250W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT13GP120S 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT